I2R Nanowave Announces New High Power Broadband Amplifier

FOR IMMEDIATE RELEASE

Contact: David Huff

Vice President, Sales and Business Development

I²R Nanowave Inc

+1 (610) 928-1038; dhuff@i2rnanowave.com

I²R Nanowave Announces New High Power Broadband Amplifier

2-40GHz with over 1 Watt Output Power

24 July 2017, Macungie PA: I²R Nanowave Inc, a leading designer and manufacturer of advanced microwave, millimeter-wave and electro-optic components and sub-systems, is announcing the release of the NW0240-31, a broadband power amplifier module. Based on I²R Nanowave proprietary Gallium Nitride (GaN) technology, the amplifier exhibits over 1 Watt of saturated output power over the incredibly broad 2-40GHz frequency range. Design for high saturated power, the amplifier still exhibits better than 10 dB harmonic suppression and 15 dB intermodulation product suppression at full power.  

The NW0240-31 is a three stage, GaN based high power amplifier well suited to Electronic Warfare applications. Available in custom form-factors for integration into customer platforms, the amplifier provides 26dB of power gain in a compact design. Based on Nanowave’s MHMIC ™ technology, the module can be deployed in military and space environments.

Located in Macungie Pennsylvania, IwR Nanowave Inc. is a world-class designer and manufacturer of advanced microwave, millimeter-wave and electro-optic components and sub-systems for Radar, Communications, and Space Applications. Our systems maintain compliance to AS9100C and ISO9001:2008 and ITAR registration. Our facility encompasses all the core capabilities needed for end-to-end microwave electronic product development, redesign and life cycle maintenance. Learn more about I²R Nanowave and these amplifiers at http://www.i2rnanowave.com/products/SSPA/Broadband.php.