FOR IMMEDIATE RELEASE
Contact: David Huff
Vice President, Sales and Business Development
I2R Nanowave Inc
+1 (610) 928-1038; firstname.lastname@example.org
I2R Nanowave Announces New High Power Broadband Amplifier
2-40GHz with over 1 Watt Output Power
24 July 2017, Macungie PA: I2R Nanowave Inc, a leading designer and manufacturer of advanced microwave, millimeter-wave and electro-optic components and sub-systems, is announcing the release of the NW0240-31, a broadband power amplifier module. Based on I2R Nanowave proprietary Gallium Nitride (GaN) technology, the amplifier exhibits over 1 Watt of saturated output power over the incredibly broad 2-40GHz frequency range. Design for high saturated power, the amplifier still exhibits better than 10 dB harmonic suppression and 15 dB intermodulation product suppression at full power.
The NW0240-31 is a three stage, GaN based high power amplifier well suited to Electronic Warfare applications. Available in custom form-factors for integration into customer platforms, the amplifier provides 26dB of power gain in a compact design. Based on Nanowave’s MHMIC ™ technology, the module can be deployed in military and space environments.